Datasheet > 2SC3838

2SC3838

更新时间： 2024-11-21 06:18:03

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	1067K
描述
NPN Plastic Encapsulated Transistor

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2SC3838 数据手册

2SC3838

50 mA, 20 V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

SOT-23

Collector

High transition frequency

Small r_bb’·C_cand high gain

Small NF

Top View

C B

Base

Emitter

PACKAGE INFORMATION

Weight: 0.0078g (Approximately)

Millimeter

Min. Max.

0.10 REF.

0.55 REF.

REF.

Min.

Max.

3.00

2.55

1.40

1.15

2.80

2.25

1.20

0.90

MARKING

0.08

0.15

0.5 REF.

1.80

0.30

2.00

0.50

0.95 TYP.

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Symbol

V_CBO

Ratings

Unit

V_CEO

V_EBO

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

I_C

100

T_J, T_STG

+150, -55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

Collector-Base Breakdown Voltage

V_(BR)CBO

I_C=10μA, I_E=0

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage

DC Current Gain

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 1mA, I_B=0

I_E=10μA, I_C=0

0.5

500

180

μA

V_CB=10V, I_E=0

V_EB= 2V, I_C=0

I_EBO

V_CE(sat)

h_FE

I_C=-10mA, I_B= 5mA

V_CE= 10V, I_C=5mA

1.4

Transition Frequency

f_T

GHz V_CE=10V, I_C= 10mA, f = 500MHz

Output Capacitance

Cob

r_bb’·C_c

1.5

V_CB=10V, I_E=0A, f=1MHz

Collector-Base Time Constant

Noise Figure

I_C=10mA,V_CB=10V, f=31.8MHz

3.5

V_CE=6V, I_C= 2mA, f = 500MHz, Rs = 50Ω

CLASSIFICATION OF h_FE

Rank

Range

56 - 120

82 - 180

01-June-2005 Rev. A

Page 1 of 3

12 3

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