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2SC3838K

更新时间: 2024-11-21 07:30:47
品牌 Logo 应用领域
科信 - KEXIN 晶体放大器晶体管光电二极管
页数 文件大小 规格书
1页 39K
描述
High-Frequency Amplifier Transistor

2SC3838K 数据手册

  
SMD Type  
Transistors  
High-Frequency Amplifier Transistor  
2SC3838K  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
High transition frequency. (Typ. fT= 1.5GHz)  
Small rbb'.Cc and high gain. (Typ. 4ps)  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
20  
11  
V
3
50  
V
Collector current  
mA  
W
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
0.2  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector cutoff current  
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current gain  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Testconditons  
Min  
20  
11  
3
Typ  
Max  
Unit  
V
IC=10  
A
IC=1mA  
IE=10  
V
V
A
VCB=10V  
VEB=2V  
0.5  
0.5  
0.5  
180  
12  
A
IEBO  
A
VCE(sat) IC=10mA,IB=5mA  
VCE=10V,IC=5mA  
rbb'.Cc VCB = 10V , IC = 10mA , f = 31.8MHz  
V
hFE  
56  
Collector-base time constant  
Noise factor  
4
ps  
dB  
NF  
Cob  
fT  
VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ù  
3.5  
0.8  
3.2  
Output capacitance  
VCE=10V, IE=0A, f=1MHz  
1.5  
pF  
Transition frequency  
VCE=10V, IE=10mA, f=500MHz  
1.4  
GHz  
hFE Classification  
Marking  
Rank  
hFE  
ADN  
N
ADP  
P
56 to 120  
82 to 180  
1
www.kexin.com.cn  

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