Datasheet > 2SC3838K

2SC3838K

更新时间： 2024-11-01 12:32:55

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	57K
描述
High transition frequency. (Typ. fT= 1.5GHz) Small rbb.Cc and high gain. (Typ. 4ps)

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中文翻译

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数据手册

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2SC3838K 数据手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

2SC3838K

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High transition frequency. (Typ. fT= 1.5GHz)

Small rbb'.Cc and high gain. (Typ. 4ps)

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector current

Collector power dissipation

Junction temperature

Storage temperature

0.2

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

Symbol

VCBO

VCEO

VEBO

ICBO

Testconditons

Min

Typ

Max

Unit

IC=10

IC=1mA

IE=10

VCB=10V

VEB=2V

0.5

180

IEBO

VCE(sat) IC=10mA,IB=5mA

VCE=10V,IC=5mA

rbb'.Cc VCB = 10V , IC = 10mA , f = 31.8MHz

hFE

Collector-base time constant

Noise factor

Cob

VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ù

3.5

0.8

3.2

Output capacitance

VCE=10V, IE=0A, f=1MHz

1.5

Transition frequency

VCE=10V, IE=10mA, f=500MHz

1.4

GHz

hFE Classification

Marking

Rank

hFE

ADN

ADP

56 to 120

82 to 180

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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