Datasheet > 2SC3835

2SC3835

更新时间： 2024-02-02 13:57:40

品牌	Logo	应用领域
THINKISEMI		晶体晶体管开关局域网
页数	文件大小	规格书
3页	729K
描述
70 Watt NPN Triple Diffused Planar Silicon Transistor

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2SC3835 数据手册

2SC3835

Pb Free Plating Product

70 Watt NPN Triple Diffused Planar Silicon Transistor

DESCRIPTION

Collector

Base

·Low Collector Saturation Voltage

: V_CE(sat)= 0.5V(Max)@ I_C=3A

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 120V (Min)

·Good Linearity of h_FE

Emitter

·Humidifier,DC-DC converter and general purpose.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

ABSOLUTE MAXIMUM RATINGS ^(Ta=25°C)

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

200

Collector-Emitter Voltage

Emitter-Base Voltage

Base Current

120

Collector Current

°C

Collector Current (PULSE)

Collector Power Dissipation( Tc=25°C )

Junction Temperature

Storage Temperature

TSTG

150

-55 ~ +150

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C,unless otherwise specified)}

PARAMETER

Collector Emitter Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Transfer Ratio

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

SYMBOL

BVCEO

ICBO

TEST CONDITIONS

Ic= 50mA

MIN TYP MAX UNIT

120

μA

VCB=200V, IE=0

VEB= 8V, Ic =0

VCE= 4V,Ic= 3A

100

220

0.5

IEBO

hFE

VCE(sat) Ic=3A ,IB=0.3A

VBE(sat)

Cob

ton

Ic=3A ,IB=0.3A

1.2

VCE=12V,IE=-0.5mA

VCB= 10V, IE= 0 A,f=1MHz

See specified Test Circuit

110

MHz

µs

Output Capacitance

Turn-on Time

0.5

3.0

0.5

Storage Time

Fall Time

tstg

Page 1/3

http://www.thinkisemi.com/

Rev.07C

12 3

中文翻译

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