Datasheet > 2SC3723_2014

2SC3723_2014

更新时间： 2024-11-22 01:19:43

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	247K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SC3723_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC3723

DESCRIPTION

·With TO-220C package

·High voltage ,high speed switching

·High reliability

APPLICATIONS

·Switching regulators

·Ultrasonic generators

·High frequency inverters

·General purpose power amplifiers

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

450

400

UNIT

Open emitter

Open base

Open collector

I_B

Base current

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-C}

Thermal resistance junction case

3.0

℃/W

12 3 4

中文翻译

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