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2SC3731 PDF预览

2SC3731

更新时间: 2024-11-19 14:53:23
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
4页 97K
描述
小信号晶体管

2SC3731 数据手册

 浏览型号2SC3731的Datasheet PDF文件第2页浏览型号2SC3731的Datasheet PDF文件第3页浏览型号2SC3731的Datasheet PDF文件第4页 
2SC3731  
NPN Silicon Epitaxial Planar Transistor  
for general purpose amplifier and high speed  
switching applications.  
The transistor is subdivided into three groups, M,  
L and K, according to its DC current gain.  
On special request, these transistors can be  
manufactured in different pin configurations.  
1. Emitter 2. Collector 3. Base  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
60  
V
V
40  
6
200  
V
Collector Current  
mA  
mW  
Power Dissipation  
Ptot  
250  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
C
Tstg  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at VCE = 1 V, IC = 10 mA  
Current Gain Group  
M
L
K
hFE  
hFE  
hFE  
hFE  
75  
100  
150  
25  
-
-
-
150  
200  
300  
-
-
-
-
-
at VCE = 1 V, IC = 100 mA  
Collector Base Cutoff Current  
at VCB = 30 V  
Emitter Base Cutoff Current  
at VEB = 3 V  
Collector Emitter Saturation Voltage  
at IC = 50 mA, IB = 5 mA  
Base Emitter Saturation Voltage  
at IC = 50 mA, IB = 5 mA  
Gain Bandwidth Product  
at VCE = 20 V, -IE = 10 mA, f = 100 MHz  
Output Capacitance  
at VCB = 5 V, f = 1 MHz  
Turn-on Time  
80  
ICBO  
IEBO  
VCE(sat)  
VBE(sat)  
fT  
-
-
-
0.1  
0.1  
0.3  
0.95  
-
A  
A  
V
-
-
0.12  
0.8  
510  
3
-
V
300  
MHz  
pF  
ns  
Cob  
-
-
-
-
4
ton  
-
70  
See test circuit  
Storage Time  
See test circuit  
Turn-off Time  
tstg  
100  
-
200  
250  
ns  
toff  
ns  
See test circuit  
®
Dated: 20/08/2016 Rev: 01  

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