Datasheet > 2SC3623AK

2SC3623AK

更新时间： 2024-11-01 23:20:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	130K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| SPAK

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3623AK 数据手册

DATA SHEET

SILICON TRANSISTORS

2SC3623, 3623A

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

High h^FE:

h^FE= 1000 to 3200 @V^CE= 5.0 V, I^C= 1.0 mA

Low V^CE(sat):

V^CE(sat)= 0.07 V TYP. @I^C/I^B= 50 mA/5.0 mA

High V^EBO:

V^EBO: 12 V (2SC3623)

V^EBO: 15 V (2SC3623A)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Ratings

2SC3623 2SC3623A

Parameter

Symbol

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Total power dissipation

Junction temperature

Storage temperature

V^CBO

V^CEO

V^EBO

I^C(DC)

P^T

Electrode connection

1. Emitter (E)

2. Collector (C)

3. Base (B)

150

250

150

°C

T^j

T^stg

−55 to +150

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D13521EJ4V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

1998

2002

12 3 4

中文翻译

下载PDF

与2SC3623AK相关器件

型号	品牌	获取价格	描述	数据表
2SC3623A-K	RENESAS	获取价格	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3623AL	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| SPAK
2SC3623A-L	NEC	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
2SC3623A-L	RENESAS	获取价格	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3623K	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| TO-221VAR
2SC3623K-A	NEC	获取价格	暂无描述
2SC3623L	NEC	获取价格	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3623-L	NEC	获取价格	暂无描述
2SC3623L-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC3624	TYSEMI	获取价格	High DC current Gain: hFE = 1000 to 3200. Low VCE(sat): (VCE(sat) = 0.07 V TYP).