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2SC3623AK PDF预览

2SC3623AK

更新时间: 2024-11-18 23:20:15
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 130K
描述
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK

2SC3623AK 数据手册

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DATA SHEET  
SILICON TRANSISTORS  
2SC3623, 3623A  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
High hFE:  
hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA  
Low VCE(sat):  
VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA  
High VEBO:  
VEBO: 12 V (2SC3623)  
VEBO: 15 V (2SC3623A)  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Ratings  
2SC3623 2SC3623A  
Parameter  
Symbol  
Unit  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Total power dissipation  
Junction temperature  
Storage temperature  
VCBO  
VCEO  
VEBO  
IC(DC)  
PT  
60  
50  
V
V
Electrode connection  
1. Emitter (E)  
12  
15  
V
2. Collector (C)  
3. Base (B)  
150  
250  
150  
mA  
mW  
°C  
°C  
Tj  
Tstg  
55 to +150  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D13521EJ4V0DS00  
Date Published April 2002 N CP(K)  
Printed in Japan  
©
2002  

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High DC current Gain: hFE = 1000 to 3200. Low VCE(sat): (VCE(sat) = 0.07 V TYP).