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2SC3624

更新时间: 2024-11-23 07:30:43
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 37K
描述
NPN Silicon Epitaxial Transistor

2SC3624 数据手册

  
SMD Type  
Transistors  
NPN Silicon Epitaxial Transistor  
2SC3624  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High DC current Gain: hFE = 1000 to 3200.  
Low VCE(sat): (VCE(sat) = 0.07 V TYP).  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
60  
Unit  
V
50  
V
12  
V
150  
mA  
mW  
Total power dissipation  
Junction temperature  
PT  
200  
Tj  
150  
Storage temperature range  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
Testconditons  
VCB = 50V, IE=0  
Min  
Typ  
Max  
100  
100  
Unit  
nA  
ICBO  
IEBO  
hFE  
VEB = 10V, IC=0  
nA  
VCE = 5V , IC = 1mA  
VCE = 5V , IC = 1mA  
1000 1800 3200  
0.56  
Base-emitter voltage *  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
Gain bandwidth product  
Output capacitance  
VBE  
V
V
VCE(sat) IC = 50mA , IB = 5mA  
VBE(sat) IC = 50mA , IB = 5mA  
0.07  
0.8  
0.3  
1.2  
V
fT  
Cob  
ton  
VCE = 5V , IE = -10mA  
VCB = 5V , IE = 0 , f = 1.0MHz  
VCC = 10V , VBE(off) = -2.7V  
IC = 50mA ,  
250  
3
MHz  
pF  
ns  
ns  
ns  
Turn-on time  
0.13  
0.72  
1.22  
Storage time  
tstg  
toff  
Turn-off time  
IB1 = -IB2 = 1mA  
*. PW 350ìs,duty cycle 2%  
hFE Classification  
Marking  
hFE  
L17  
L18  
1000 2000  
1600 3200  
1
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