Datasheet > 2SC3622-L

2SC3622-L

更新时间： 2024-11-24 03:12:15

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	107K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN

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中文翻译

获取价格

数据手册

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2SC3622-L 数据手册

DATA SHEET

SILICON TRANSISTORS

2SC3622, 3622A

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

High h^FE:

h^FE= 1000 to 3200 @V^CE= 5.0 V, I^C= 1.0 mA

Low V^CE(sat):

V^CE(sat)= 0.07 V TYP. @I^C/I^B= 50 mA/5.0 mA

High V^EBO:

V^EBO: 12 V (2SC3622)

V^EBO: 15 V (2SC3622A)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Ratings

2SC3622 2SC3622A

Parameter

Symbol

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Total power dissipation

Junction temperature

Storage temperature

V^CBO

V^CEO

V^EBO

I^C(DC)

P^T

150

250

150

°C

T^j

−55 to +150

T^stg

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 50 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

I^EBO

V^EB= 10 V, I^C= 0

100

h^FE1*

h^FE2*

V^BE*

V^CE(sat)*

V^BE(sat)*

f^T

V^CE= 5.0 V, I^C= 1.0 mA

V^CE= 5.0 V, I^C= 100 mA

V^CE= 5.0 V, I^C= 1.0 mA

I^C= 50 mA, I^B= 5.0 mA

V^CE= 5.0 V, I^E= −10 mA

1000

200

1800

350

560

0.07

0.8

3200

DC current gain

DC base voltage

Collector saturation voltage

Base saturation voltage

Gain bandwidth product

Output capacitance

Turn-on time

0.30

1.2

250

3.0

MHz

µs

C^ob

V^CB= 5 V, I^E= 0, f = 1.0 MHz

t^on

V^CC= 10 V, V^BE(off)= –2.7 V

I^C= 50 mA

0.13

0.72

1.22

µs

Storage temperature

Fall time

t^stg

I^B1= −I^B2= 1 mA

µs

t^off

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16151EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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与2SC3622-L相关器件

型号	品牌	获取价格	描述	数据表
2SC3622-L-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC3623	NEC	获取价格	2SC3623A
2SC3623	RENESAS	获取价格	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3623A	NEC	获取价格	2SC3623A
2SC3623A	RENESAS	获取价格	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3623-A	NEC	获取价格	暂无描述
2SC3623AK	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| SPAK
2SC3623A-K	RENESAS	获取价格	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3623AL	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| SPAK
2SC3623A-L	NEC	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,