Datasheet > 2SC3354T

2SC3354T

更新时间： 2024-09-24 23:20:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	58K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 50MA I(C) \| SIP

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中文翻译

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数据手册

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2SC3354T 数据手册

Transistor

2SC3354

Silicon NPN epitaxial planer type

For high-frequency amplification/oscillation/mixing

Unit: mm

4.0±0.2

Features

Optimum for high-density mounting.

■

●

Allowing supply with the radial taping.

●

High transition frequency f_T.

marking

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1.27 1.27

2.54±0.15

˚C

1:Emitter

2:Collector

3:Base

Collector power dissipation

Junction temperature

Storage temperature

P_C

300

EIAJ:SC–72

New S Type Package

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage

I_C= 100µA, I_E= 0

I_E= 10µA, I_C= 0

_CB= 10V, I_E= –2mA

V_EBO

h_FE

250

V_BE

V_CB= 10V, I_E= –2mA

720

0.8

Common base reverse transfer capacitance C_rb

V_CE= 6V, I_C= 0, f = 1MHz

Common emitter reverse transfer capacitance C_re

V_CE= 10V, I_C= 1mA, f = 10.7MHz

V_CB= 10V, I_E= –15mA, f = 200MHz

V_CB= 10V, I_E= –1mA, f = 100MHz

1.5

Transition frequency

Power gain

f_T

600

1200

1600

MHz

^*h_FERank classification

Rank

f_T(MHz)

600 ~ 1300 900 ~ 1600

12 3 4

中文翻译

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