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2SC3233(2-7B1A) PDF预览

2SC3233(2-7B1A)

更新时间: 2024-11-20 19:52:15
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
4页 106K
描述
TRANSISTOR 2000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Purpose Small Signal

2SC3233(2-7B1A) 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.29.00.95风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):8JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):3500 nsBase Number Matches:1

2SC3233(2-7B1A) 数据手册

 浏览型号2SC3233(2-7B1A)的Datasheet PDF文件第2页浏览型号2SC3233(2-7B1A)的Datasheet PDF文件第3页浏览型号2SC3233(2-7B1A)的Datasheet PDF文件第4页 
2SC3233  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
2SC3233  
Switching Regulator and High Voltage Switching  
Unit: mm  
Applications  
High Speed DC-DC Converter Applications  
·
·
Excellent switching times: t = 1.0 µs (max)  
r
t = 1.0 µs (max), (I = 0.8 A)  
f
C
High collector breakdown voltage: V  
= 400 V  
CEO  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
500  
V
V
V
A
A
CBO  
CEO  
EBO  
400  
7
I
2
0.5  
C
Base current  
I
B
Ta = 25°C  
1.0  
Collector power  
P
W
C
dissipation  
JEDEC  
JEITA  
Tc = 25°C  
20  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
55 to 150  
stg  
TOSHIBA  
2-7B1A  
Weight: 0.36 g (typ.)  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2002-07-23  

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