Datasheet > 2SC3235

2SC3235

更新时间： 2024-11-20 06:26:03

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	89K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC3235 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3235

DESCRIPTION

·With TO-220 package

·High voltage,high speed

·Low saturation voltage

APPLICATIONS

·For high voltage ,high speed and

high power switching applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

Collector-base voltage

500

ꢀ

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

400

Open collector

I_CM

Collector current-Peak

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_C=25ꢀ

T_j

150

-55~150

T_stg

ꢀ

12 3

中文翻译

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与2SC3235相关器件

型号	品牌	获取价格	描述	数据表
2SC3236	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 5A I(C) \| TO-220VAR
2SC3239	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 5A I(C) \| TO-220VAR
2SC3240	MITSUBISHI	获取价格	NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3241	MITSUBISHI	获取价格	NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3242	ISAHAYA	获取价格	FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3242	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO
2SC3242-11-E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3
2SC3242-11-F	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3
2SC3242-11-G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3
2SC3242A	ISAHAYA	获取价格	FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE