是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.69 | 最大集电极电流 (IC): | 5 A |
配置: | Single | 最小直流电流增益 (hFE): | 70 |
JESD-609代码: | e0 | 最高工作温度: | 140 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 25 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3240 | MITSUBISHI |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) | |
2SC3241 | MITSUBISHI |
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NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) | |
2SC3242 | ISAHAYA |
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FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE | |
2SC3242 | MITSUBISHI |
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Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO | |
2SC3242-11-E | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 | |
2SC3242-11-F | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 | |
2SC3242-11-G | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 | |
2SC3242A | ISAHAYA |
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FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE | |
2SC3242A | MITSUBISHI |
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Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO | |
2SC3242A-11-G | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 |