是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | MP-5 | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
Factory Lead Time: | 1 week | 风险等级: | 5.28 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.2 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1.25 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC2688G-K-T60-K | UTC |
获取价格 |
Transistor | |
2SC2688G-K-T6C-K | UTC |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SC2688G-L-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SC2688G-L-T6C-K | UTC |
获取价格 |
Transistor | |
2SC2688G-M-T60-K | UTC |
获取价格 |
Transistor | |
2SC2688G-M-T6C-K | UTC |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SC2688G-N-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SC2688G-N-T6C-K | UTC |
获取价格 |
Transistor | |
2SC2688G-X-T60-K | UTC |
获取价格 |
NPN SILICON TRANSISTOR | |
2SC2688G-X-T6C-K | UTC |
获取价格 |
NPN SILICON TRANSISTOR |