Datasheet > 2SC2688-L

2SC2688-L

更新时间： 2024-11-19 01:22:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	311K
描述
0.2A, 300V NPN Plastic Encapsulated Transistor

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2SC2688-L 数据手册

2SC2688

0.2A, 300V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

TO-126

ꢀ

Low frequency power amplifier

Circuits chroma output of Color TV

ꢀ

1Emitter

2Collector

3Base

CLASSIFICATION OF h_FE

Product-Rank

2SC2688-L

2SC2688-K

160~250

Range

100~200

Collector

Base

Millimeter

REF.

Min.

Max.

Min.

Max.

1.50

0.60

0.86

2.30

1.37

3.20

Emitter

7.40

2.50

7.80

2.90

1.10

0.45

0.66

2.10

1.17

3.00

10.60

15.30

3.70

11.00

15.70

3.90

4.10

2.29 TYP.

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

300

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current-Continuous

Collector Power Dissipation

Junction and Storage Temperature

200

1.25

°C

P_C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut–Off Current

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Condition

300

I_C=100µA, I_E=0

I_C=1mA, I_B=0

300

I_E=100µA, I_C=0

V_CB=200V, I_E=0

V_EB=5V, I_C=0

0.1

250

0.5

µA

Emitter Cut–Off Current

I_EBO

DC Current Gain

h_FE

100

V_CE=10V, I_C=10mA

I_C=50mA, I_B=5mA

Collector to Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

f_T

MHz V_CE=30V, I_C=10mA

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Dec-2015 Rev. B

Page 1 of 2

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