Datasheet > 2SC1568S

2SC1568S

更新时间： 2024-02-15 13:12:34

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	77K
描述
TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 1A I(C) \| TO-126

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中文翻译

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技术参数
数据手册

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2SC1568S 技术参数

生命周期：	Lifetime Buy	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	1 A
配置：	Single	最小直流电流增益 (hFE)：	250
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.2 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SC1568S 数据手册

Power Transistors

2SC1568

Silicon NPN epitaxial planar type

Unit: mm

+0.5

–0.1

For low-voltage type medium output power amplification

8.0

3.2 0.2

Complementary to 2SA0900 (2SA900)

φ 3.16 0.1

I Features

•

Low collector to emitter saturation voltage V_CE(sat)

Satisfactory operation performances and high efficiency with a

low-voltage power supply

•

TO-126B package which incorporates a unique construction en-

abling installation to the heat sink without using insulation parts

0.75 0.1

4.6 0.2

0.5 0.1

2.3 0.2

I Absolute Maximum Ratings T_C= 25°C

0.5 0.1

1.76 0.1

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

1 : Emitter

2 : Collector

3 : Base

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

TO-126B Package

I_C

1.2

Collector power dissipation ^*

Junction temperature

Storage temperature

P_C

°C

T_j

150

T_stg

−55 to +150

Note) : Without heat sink

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

Unit

µA

Collector cutoff current

V_CB= 10 V, I_E= 0

V_CE= 18 V, I_B= 0

I_C= 10 µA, I_E= 0

I_CEO

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= 1 mA, I_B= 0

I_E= 10 µA, I_C= 0

Forward current transfer ratio

h_FE1

V_CE= 2 V, I_C= 500 mA

V_CE= 2 V, I_C= 1.5 A

I_C= 1 A, I_B= 50 mA

I_C= 500 mA, I_B= 50 mA

280

h_FE2

V_CE(sat)

V_BE(sat)

f_T

100

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

0.5

1.2

V_CB= 6 V, I_E= −50 mA, f = 200 MHz

150

MHz

Collector output capacitance

C_ob

V_CB= 6 V, I_E= 0, f = 1 MHz

Note) : Rank classification

Rank

h_FE1

90 to 155

130 to 210 180 to 280

Note) The part number in the parenthesis shows conventional part number.

12 3 4

中文翻译

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