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2SB740 PDF预览

2SB740

更新时间: 2024-11-06 12:54:35
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
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描述
TRANSISTOR (PNP)

2SB740 数据手册

  
RoHS  
2SB740  
TO-92MOD  
2SB740  
TRANSISTOR (PNP)  
1. EMITTER  
FEATURE  
Power dissipation  
2. COLLECTOR  
3. BASE  
PCM:  
0.9  
-1  
W (Tamb=25)  
Collector current  
ICM:  
A
V
123  
Collector-base voltage  
V(BR)CBO  
:
-70  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= -10µA , IE=0  
IC=-1mA , IB=0  
IE= -10µA, IC=0  
VCB= -55 V, IE=0  
VEB= -6 V, IC=0  
MIN  
-70  
-50  
-6  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
-1  
µA  
µA  
Emitter cut-off current  
IEBO  
-0.2  
DC current gain  
hFE  
VCE=-2 V, IC= -100mA  
IC= -1A, IB=-100mA  
100  
100  
320  
-0.6  
Collector-emitter saturation voltage  
VCEsat  
V
Transition frequency  
Output capacitance  
VCE=-2V, IC= -10mA  
MHz  
fT  
VCE=-10V, IE=0, f=1 MHz  
45  
pF  
Cob  
CLASSIFICATION OF hFE  
WEJ ELECTRONIC CO.,LTD  
Rank  
B
C
Range  
100-200  
160-320  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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