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2SB1626Y PDF预览

2SB1626Y

更新时间: 2024-11-21 20:32:59
品牌 Logo 应用领域
急速微 - ALLEGRO /
页数 文件大小 规格书
1页 24K
描述
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN

2SB1626Y 技术参数

生命周期:Obsolete零件包装代码:TO-220F
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:ISOLATED
最大集电极电流 (IC):6 A集电极-发射极最大电压:110 V
配置:DARLINGTON WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):15000
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SB1626Y 数据手册

  
E
C
(70)  
B
Darlington 2 S B1 6 2 6  
Equivalent circuit  
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495)  
Application : Audio, Series Regulator and General Purpose  
External Dimensions FM20(TO220F)  
Absolute maximum ratings  
Electrical Characteristics  
(Ta=25°C)  
(Ta=25°C)  
Symbol  
2SB1626  
Symbol  
ICBO  
Conditions  
VCB=110V  
2SB1626  
Unit  
Unit  
µA  
µA  
V
±0.2  
4.2  
±0.2  
10.1  
VCBO  
VCEO  
VEBO  
IC  
–110  
–100max  
–100max  
–110min  
5000min  
–2.5max  
–3.0max  
100typ  
c
V
0.5  
2.8  
–110  
IEBO  
VEB=5V  
V
–5  
V(BR)CEO  
hFE  
IC=30mA  
V
±0.2  
ø3.3  
VCE=4V, IC=5A  
IC=5A, IB=5mA  
IC=5A, IB=5mA  
VCE=12V, IE=0.5A  
VCB=10V, f=1MHz  
–6  
–1  
A
a
b
IB  
VCE(sat)  
VBE(sat)  
fT  
V
V
A
PC  
30(Tc=25°C)  
150  
W
°C  
°C  
Tj  
MHz  
pF  
±0.15  
1.35  
Tstg  
COB  
110typ  
–55 to +150  
±0.15  
1.35  
+0.2  
-0.1  
to  
to  
to  
hFE Rank O(5000 12000), P(6500 20000), Y(15000 30000)  
0.85  
2.54  
+0.2  
-0.1  
0.45  
±0.2  
2.4  
2.54  
Typical Switching Characteristics (Common Emitter)  
±0.2  
2.2  
Weight : Approx 2.0g  
a. Type No.  
b. Lot No.  
RL  
IC  
VBB2  
(V)  
IB2  
ton  
tstg  
tf  
VCC  
(V)  
VBB1  
IB1  
()  
(A)  
(mA)  
(µs)  
(µs)  
(µs)  
(V)  
(mA)  
B
C E  
6
–5  
5
5
1.1typ  
3.2typ  
1.1typ  
–30  
–10  
–5  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=–4V)  
–6  
–6  
–4  
–2  
0
–3  
–4  
–2  
0
–2  
–5A  
IC=–3A  
–1  
0
0
–2  
–4  
–6  
–0.1  
–0.5 –1  
–5 –10  
–50 –100  
0
–1  
–2  
–3  
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
θ
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
(VCE=–4V)  
(VCE=–4V)  
5.0  
40,000  
50000  
125˚C  
Typ  
25˚C  
10,000  
5,000  
10000  
–30˚C  
5000  
1.0  
1000  
500  
1,000  
500  
0.5  
0.3  
100  
200  
1
10  
100  
1000  
–0.02 –0.05 –0.1  
–0.5  
–1  
–5 –6  
–0.2  
–0.05 –0.1  
–0.5  
–1  
–5 –6  
Time t(ms)  
Collector Current IC(A)  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=–12V)  
30  
20  
10  
120  
100  
80  
–20  
–10  
–5  
Typ  
60  
–1  
–0.5  
40  
Without Heatsink  
Natural Cooling  
20  
0
–0.1  
Without Heatsink  
2
0
–0.05  
0.02  
0.05 0.1  
0.5  
1
5 6  
–3  
–5  
–10  
–50  
–100 –200  
0
25  
50  
75  
100  
125  
150  
Ambient Temperature Ta(˚C)  
Collector-Emitter Voltage VCE(V)  
Emitter Current IE(A)  
53  

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