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2SB1626_2014 PDF预览

2SB1626_2014

更新时间: 2024-11-12 01:18:55
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
3页 160K
描述
Silicon PNP Darlington Power Transistors

2SB1626_2014 数据手册

 浏览型号2SB1626_2014的Datasheet PDF文件第2页浏览型号2SB1626_2014的Datasheet PDF文件第3页 
JMnic  
Product Specification  
Silicon PNP Darlington Power Transistors  
2SB1626  
DESCRIPTION  
·With TO-220F package  
·Complement to type 2SD2495  
APPLICATIONS  
·For audio,series regulator and  
general purpose applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220F) and symbol  
3
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
-110  
-110  
-5  
UNIT  
V
Open base  
V
Open collector  
V
-6  
A
IB  
Base current  
-1  
A
PC  
Collector dissipation  
Junction temperature  
Storage temperature  
TC=25  
30  
W
Tj  
150  
-55~150  
Tstg  

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