Datasheet > 2SB1626_2014

2SB1626_2014

更新时间： 2024-11-22 01:18:55

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	160K
描述
Silicon PNP Darlington Power Transistors

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中文翻译

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数据手册

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2SB1626_2014 数据手册

JMnic

Product Specification

Silicon PNP Darlington Power Transistors

2SB1626

DESCRIPTION

·With TO-220F package

·Complement to type 2SD2495

APPLICATIONS

·For audio,series regulator and

general purpose applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-110

-5

UNIT

Open base

Open collector

-6

I_B

Base current

-1

P_C

Collector dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3

中文翻译

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与2SB1626_2014相关器件

型号	品牌	获取价格	描述	数据表
2SB1626O	ISC	获取价格	暂无描述
2SB1626O	SANKEN	获取价格	暂无描述
2SB1626O	ALLEGRO	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1626P	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1626P	ALLEGRO	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1626Y	SANKEN	获取价格	暂无描述
2SB1626Y	ALLEGRO	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1627	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1628	KEXIN	获取价格	PNP Silicon Epitaxial Transistor
2SB1628	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHIN