2SB1626O

更新时间： 2024-11-11 13:04:11

品牌	Logo	应用领域
三垦 - SANKEN		晶体稳压器晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
1页	27K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1626O 数据手册

(70Ω)

Darlington 2 S B1 6 2 6

Equivalent circuit

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495)

Application : Audio, Series Regulator and General Purpose

External Dimensions FM20(TO220F)

■Absolute maximum ratings

■Electrical Characteristics

(Ta=25°C)

Symbol

2SB1626

Symbol

I^CBO

Conditions

V^CB=–110V

2SB1626

Unit

µA

±0.2

4.2

±0.2

10.1

V^CBO

VCEO

VEBO

–110

–100max

–110min

5000min

–2.5max

–3.0max

100typ

0.5

2.8

–110

IEBO

V^EB=–5V

–5

V(BR)CEO

hFE

I^C=–30mA

±0.2

ø3.3

V^CE=–4V, IC=–5A

I^C=–5A, IB=–5mA

V^CE=–12V, IE=0.5A

V^CB=–10V, f=1MHz

–6

–1

VCE(sat)

VBE(sat)

30(Tc=25°C)

150

°C

MHz

±0.15

1.35

Tstg

COB

110typ

–55 to +150

±0.15

1.35

+0.2

-0.1

hFE Rank O(5000 12000), P(6500 20000), Y(15000 30000)

0.85

2.54

+0.2

-0.1

0.45

±0.2

2.4

2.54

■Typical Switching Characteristics (Common Emitter)

±0.2

2.2

Weight : Approx 2.0g

a. Type No.

b. Lot No.

R^L

I^C

V^BB2

(V)

I^B2

ton

tstg

V^CC

(V)

VBB1

I^B1

(Ω)

(A)

(mA)

(µs)

(V)

(mA)

C E

–5

1.1typ

3.2typ

1.1typ

–30

–10

–5

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=–4V)

–6

–4

–2

–3

–4

–2

–5A

IC=–3A

–1

–2

–4

–6

–0.1

–0.5 –1

–5 –10

–50 –100

–1

–2

–3

Collector-Emitter Voltage VCE(V)

Base Current IB(mA)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

(VCE=–4V)

5.0

40,000

50000

125˚C

Typ

25˚C

10,000

5,000

10000

–30˚C

5000

1.0

1000

500

1,000

500

0.5

0.3

100

200

100

1000

–0.02 –0.05 –0.1

–0.5

–1

–5 –6

–0.2

–0.05 –0.1

–0.5

–1

–5 –6

Time t(ms)

Collector Current I^C(A)

Collector Current IC(A)

–

f^TIE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

120

100

–20

–10

–5

Typ

–1

–0.5

Without Heatsink

Natural Cooling

–0.1

Without Heatsink

–0.05

0.02

0.05 0.1

0.5

5 6

–3

–5

–10

–50

–100 –200

100

125

150

Ambient Temperature Ta(˚C)

Collector-Emitter Voltage V^CE(V)

Emitter Current IE(A)

中文翻译

下载PDF

与2SB1626O相关器件

型号	品牌	获取价格	描述	数据表
2SB1626P	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1626P	ALLEGRO	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1626Y	SANKEN	获取价格	暂无描述
2SB1626Y	ALLEGRO	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1627	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1628	KEXIN	获取价格	PNP Silicon Epitaxial Transistor
2SB1628	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHIN
2SB1628	TYSEMI	获取价格	High current capacitance. Low collector saturation voltage.
2SB1628	RENESAS	获取价格	3A, 16V, PNP, Si, POWER TRANSISTOR
2SB1628_15	KEXIN	获取价格	PNP Transistors

与2SB1626O相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB1626O

2SB1626O 数据手册

与2SB1626O相关器件

与2SB1626O相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB1626O

2SB1626O 数据手册

与2SB1626O相关器件

与2SB1626O相关文章

您还可以找

您在本页遇到什么问题？