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2SB1477 PDF预览

2SB1477

更新时间: 2024-10-30 06:20:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 226K
描述
isc Silicon PNP Power Transistor

2SB1477 数据手册

 浏览型号2SB1477的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
2SB1477  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= -100V(Min.)  
·Wide Area of Safe Operation  
·Complement to Type 2SD2236  
APPLICATIONS  
·Designed for driver and general purpose applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-100  
-100  
-5  
UNIT  
V
V
V
Collector Current-Continuous  
-5  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
60  
W
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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2SB1477F ETC

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