Datasheet > 2SB1481

2SB1481

更新时间： 2024-11-01 06:17:11

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	214K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1481 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1481

DESCRIPTION

·With TO-220F package

·Complement to type 2SD2241

·High DC current gain.

·Low saturation voltage.

·DARLINGTON

APPLICATIONS

·For power amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-100

-5

UNIT

Open emitter

Open base

Open collector

±4

I_CM

Collector current-peak

±6

T_C=25ꢀ

T_a=25ꢀ

P_C

Collector dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

ꢀ

T_stg

12 3

中文翻译

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2SB1482T105/QR	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3