2SB1481

更新时间： 2024-09-15 06:20:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	219K
描述
isc Silicon PNP Darlington Power Transistor

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技术参数
数据手册

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2SB1481 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

2SB1481 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1481

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -100V(Min)

·High DC Current Gain-

: h_FE= 2000(Min)@ (V_CE= -2V, I_C= -1.5A)

·Low Collector Saturation Voltage-

: V_CE(sat)= -1.5V(Max)@ (I_C= -3A, I_B= -6mA)

·Complement to Type 2SD2241

APPLICATIONS

·High power switching applications.

·Hammer drive, pulse motor drive applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-100

-5

UNIT

Collector Current-Continuous

Collector Current-Pulse

Base Current-Continuous

-4

I_CM

-6

I_B

-0.3

Collector Power Dissipation

@T_a=25℃

P_C

Collector Power Dissipation

@T_C=25℃

Junction Temperature

Storage Temperature

150

-55~150

℃

T_J

T_stg

isc Website：www.iscsemi.cn

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