Datasheet > 2SB1412TL/P

2SB1412TL/P

更新时间： 2024-11-23 05:42:07

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	113K
描述
5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN

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数据手册

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2SB1412TL/P 数据手册

2SB1386 / 2SB1412

Transistors

Low frequency transistor (−20V, −5A)

2SB1386 / 2SB1412

zFeatures

zDimensions (Unit : mm)

1) Low V^CE(sat).

2SB1386

2SB1412

V^CE(sat)= −0.35V (Typ.)

(I^C/IB = −4A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2098 / 2SD2118.

zStructure

Epitaxial planar type

PNP silicon transistor

(1) Base

(2) Collector

(3) Emitter

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

ROHM : CPT3

EIAJ : SC-63

Abbreviated symbol: BH

∗

Denotes hFE

∗

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

−30

−20

−6

Unit

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

−5

A(DC)

A(Pulse)

Collector current

−10

∗

)

0.5

2SB1386

Collector power

dissipation

2SB1412

W(Tc=25°C

°C

Junction temperature

Storage temperature

1 Single pulse, Pw=10ms

150

Tstg

−55 to 150

°C

∗

2 When mounted on a 40

40×

0.7 mm ceramic board.

∗

Rev.B

1/4

12 3 4 5

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与2SB1412TL/P相关器件

型号	品牌	获取价格	描述	数据表
2SB1412TL/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1412TL/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1412TL/Q	ROHM	获取价格	5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN
2SB1412TL/QR	ROHM	获取价格	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1412TL/R	ROHM	获取价格	5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN
2SB1412TLQ	ROHM	获取价格	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-
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