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2SB1347Q PDF预览

2SB1347Q

更新时间: 2024-11-25 23:20:07
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页数 文件大小 规格书
4页 55K
描述
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 12A I(C) | TO-247VAR

2SB1347Q 数据手册

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Power Transistors  
2SB1347  
Silicon PNP triple diffusion planar type  
For high power amplification  
Complementary to 2SD2029  
Unit: mm  
φ 3.3±0.2  
5.0±0.3  
20.0±0.5  
3.0  
Features  
Satisfactory foward current transfer ratio hFE vs. collector cur-  
rent IC characteristics  
Wide area of safe operation (ASO)  
1.5  
High transition frequency fT  
Optimum for the output stage of a HiFi audio amplifier  
1.5  
2.0±0.3  
2.7±0.3  
3.0±0.3  
Absolute Maximum Ratings (T =25˚C)  
C
1.0±0.2  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–160  
–160  
–5  
Unit  
V
0.6±0.2  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
5.45±0.3  
10.9±0.5  
V
V
1:Base  
2:Collector  
–20  
A
1
2
3
3:Emitter  
TOP–3L Package  
IC  
–12  
A
Collector power TC=25°C  
120  
PC  
W
dissipation  
Ta=25°C  
3.5  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
IEBO  
hFE1  
Conditions  
min  
typ  
max  
–50  
–50  
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
VCB = –160V, IE = 0  
VEB = –3V, IC = 0  
µA  
VCE = –5V, IC = –20mA  
VCE = –5V, IC = –1A  
20  
60  
20  
*
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
hFE3  
VBE  
200  
VCE = –5V, IC = –8A  
VCE = –5V, IC = –8A  
–1.8  
–2.0  
V
V
Collector to emitter saturation voltage VCE(sat)  
IC = –8A, IB = – 0.8A  
Transition frequency  
fT  
VCE = –5V, IC = – 0.5A, f = 1MHz  
VCB = –10V, IE = 0, f = 1MHz  
15  
MHz  
pF  
Collector output capacitance  
Cob  
400  
*hFE2 Rank classification  
Rank  
hFE2  
Q
S
P
60 to 120  
80 to 160  
100 to 200  
1

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