生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.71 |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 160 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1353AT114D | ROHM |
获取价格 |
1.5A, 160V, PNP, Si, POWER TRANSISTOR |
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2SB1353AT114E | ROHM |
获取价格 |
1.5A, 160V, PNP, Si, POWER TRANSISTOR |
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2SB1353D | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-225VAR |
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2SB1353E | ROHM |
获取价格 |
Transistor |
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2SB1353F | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-225VAR |
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2SB1353T114 | ROHM |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy |
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2SB1353T114/D | ROHM |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy |
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2SB1353T114/DE | ROHM |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy |
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2SB1353T114/DF | ROHM |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy |
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2SB1353T114/E | ROHM |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy |
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