Datasheet > 2SB1351_07

2SB1351_07

更新时间： 2024-11-26 07:30:03

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	30K
描述
Silicon PNP Epitaxial Planar Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1351_07 数据手册

(2kΩ)(100Ω)

Darlington 2 S B1 3 5 1

Equivalent circuit

Silicon PNP Epitaxial Planar Transistor

Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose

■Absolute maximum ratings

■Electrical Characteristics

(Ta=25°C)

External Dimensions FM20(TO220F)

Symbol

Ratings

Symbol

I^CBO

Condition

Ratings

–10max

–60min

Unit

µA

±0.2

4.2

±0.2

10.1

0.5

2.8

V^CBO

VCEO

VEBO

–60

V^CB=–60V

IEBO

V^EB=–6V

V(BR)CEO

hFE

I^C=–10mA

–6

±0.2

ø3.3

2000min

–1.5max

–2.0max

130typ

V^CE=–4V, IC=–10A

I^C=–10A, IB=–20mA

V^CE=–12V, IE=1A

V^CB=–10V, f=1MHz

–12(Pulse–20)

–1

VCE(sat)

VBE(sat)

30(Tc=25°C)

150

°C

±0.15

1.35

MHz

±0.15

1.35

COB

170typ

Tstg

–55 to +150

+0.2

-0.1

0.85

+0.2

-0.1

0.45

±0.2

2.4

2.54

■Typical Switching Characteristics (Common Emitter)

±0.2

2.2

Weight : Approx 2.0g

a. Part No.

b. Lot No.

V^BB2

(V)

I^B1

I^B2

ton

tstg

V^CC

(V)

R^L

I^C

VBB1

(Ω)

(A)

(V)

(mA)

(µs)

C E

–20

0.7typ

1.5typ

0.6typ

–40

–10

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

I^CVBE Temperature Characteristics (Typical)

(VCE=–4V)

–20

–15

–10

–5

–3

–20

–15

–10

–5

–2

IC=–10A

–5A

–1

–1A

–0.1

–1

–2

–3

–4

–5

–6

–1

–10

–100

–1

–2

–2.4

Collector-Emitter Voltage VCE(V)

Base Current IB(mA)

Base-Emittor Voltage V^BE(V)

–

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

^j-at Characteristics

(VCE=–4V)

20000

10000

5000

10000

5000

Typ

1000

500

0.5

0.3

1000

800

100

1000

–0.3 –0.5

–1

–5

–10

–20

–0.3

–1

–5

–10

–20

Time t(ms)

Collector Current I^C(A)

Collector Current IC(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

240

200

160

120

–30

Natural Cooling

Silicone Grease

Heatsink: Aluminum

in mm

–10

–5

Typ

150x150x2

100x100x2

–1

–0.5

Without Heatsink

Natural Cooling

50x50x2

–0.1

Without Heatsink

–0.05

–2

–5

–10

–50

–100

0.05 0.1

0.5

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current IE(A)

中文翻译

下载PDF

与2SB1351_07相关器件

型号	品牌	获取价格	描述	数据表
2SB1352	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor(Driver for Printer Head, Solenoid, Relay, Motor an
2SB1353	ISC	获取价格	isc Silicon PNP Power Transistor
2SB1353	ROHM	获取价格	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1353	FOSHAN	获取价格	TO-220F
2SB1353A	ROHM	获取价格	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1353AD	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| TO-225VAR
2SB1353AE	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| TO-225VAR
2SB1353AT114	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SB1353AT114/D	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SB1353AT114/E	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy

与2SB1351_07相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB1351_07

2SB1351_07 数据手册

与2SB1351_07相关器件

与2SB1351_07相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB1351_07

2SB1351_07 数据手册

与2SB1351_07相关器件

与2SB1351_07相关文章

您还可以找

您在本页遇到什么问题？