Datasheet > 2SB1351_07

2SB1351_07

更新时间： 2024-02-23 08:02:43

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	30K
描述
Silicon PNP Epitaxial Planar Transistor

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中文翻译

获取价格

数据手册

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2SB1351_07 数据手册

(2kΩ)(100Ω)

Darlington 2 S B1 3 5 1

Equivalent circuit

Silicon PNP Epitaxial Planar Transistor

Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose

■Absolute maximum ratings

■Electrical Characteristics

(Ta=25°C)

External Dimensions FM20(TO220F)

Symbol

Ratings

Symbol

I^CBO

Condition

Ratings

–10max

–60min

Unit

µA

±0.2

4.2

±0.2

10.1

0.5

2.8

V^CBO

VCEO

VEBO

–60

V^CB=–60V

IEBO

V^EB=–6V

V(BR)CEO

hFE

I^C=–10mA

–6

±0.2

ø3.3

2000min

–1.5max

–2.0max

130typ

V^CE=–4V, IC=–10A

I^C=–10A, IB=–20mA

V^CE=–12V, IE=1A

V^CB=–10V, f=1MHz

–12(Pulse–20)

–1

VCE(sat)

VBE(sat)

30(Tc=25°C)

150

°C

±0.15

1.35

MHz

±0.15

1.35

COB

170typ

Tstg

–55 to +150

+0.2

-0.1

0.85

+0.2

-0.1

0.45

±0.2

2.4

2.54

■Typical Switching Characteristics (Common Emitter)

±0.2

2.2

Weight : Approx 2.0g

a. Part No.

b. Lot No.

V^BB2

(V)

I^B1

I^B2

ton

tstg

V^CC

(V)

R^L

I^C

VBB1

(Ω)

(A)

(V)

(mA)

(µs)

C E

–20

0.7typ

1.5typ

0.6typ

–40

–10

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

I^CVBE Temperature Characteristics (Typical)

(VCE=–4V)

–20

–15

–10

–5

–3

–20

–15

–10

–5

–2

IC=–10A

–5A

–1

–1A

–0.1

–1

–2

–3

–4

–5

–6

–1

–10

–100

–1

–2

–2.4

Collector-Emitter Voltage VCE(V)

Base Current IB(mA)

Base-Emittor Voltage V^BE(V)

–

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

^j-at Characteristics

(VCE=–4V)

20000

10000

5000

10000

5000

Typ

1000

500

0.5

0.3

1000

800

100

1000

–0.3 –0.5

–1

–5

–10

–20

–0.3

–1

–5

–10

–20

Time t(ms)

Collector Current I^C(A)

Collector Current IC(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

240

200

160

120

–30

Natural Cooling

Silicone Grease

Heatsink: Aluminum

in mm

–10

–5

Typ

150x150x2

100x100x2

–1

–0.5

Without Heatsink

Natural Cooling

50x50x2

–0.1

Without Heatsink

–0.05

–2

–5

–10

–50

–100

0.05 0.1

0.5

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current IE(A)

中文翻译

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与2SB1351_07相关器件

型号	品牌	获取价格	描述	数据表
2SB1352	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor(Driver for Printer Head, Solenoid, Relay, Motor an
2SB1353	ISC	获取价格	isc Silicon PNP Power Transistor
2SB1353	ROHM	获取价格	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1353	FOSHAN	获取价格	TO-220F
2SB1353A	ROHM	获取价格	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1353AD	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| TO-225VAR
2SB1353AE	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| TO-225VAR
2SB1353AT114	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SB1353AT114/D	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SB1353AT114/E	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy

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