Datasheet > 2SB1261-ZK(TO-251)

2SB1261-ZK(TO-251)

更新时间： 2024-11-18 14:46:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	254K
描述
Transistor

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2SB1261-ZK(TO-251) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB1261-ZK(TO-251) 数据手册

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/TO-252-2L Plastic-Encapsulate Transistors

TO-251

TO-252-2L

2SB1261-Z TRANSISTOR (PNP)

1 2 3

FEATURES

1. BASE

High h_FEh_FE=100 to 400

Low v_CE(sat)v_CE(sat)≤0.3V

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-60

Units

-60

-7

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-3

P_D

℃

T_J

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-60

-7

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-100µA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBO

I_CBO

I_EBO

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(sat)

f_T

I_E=-100µA, I_C=0

V_CB=-60V, I_E=0

-10

µA

Emitter cut-off current

V_EB=-7V, I_C=0

V_CE=-2V, I_C=-200mA

V_CE=-2V, I_C=-600mA

V_CE=-2V, I_C=-2A

100

DC current gain

400

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-1.5A, I_B=-150mA

V_CE=-5V, I_C=-1.5A

V_CB=-10V, I_E=0, f=1MHz

-0.3

-1.2

MHz

Collector output capacitance

Turn on Time

C_ob

t_on

0.5

2.0

0.5

V_CC=-10V, I_C=-1A, I_B1=-I_B2=-0.1A,

Switching Time

t_stg

µs

Storage Time

Fall Time

R_L=10Ω

t_f

CLASSIFICATION OF h_FE(1)

Rank

Range

100-200

160-320

200-400

12 3

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