Datasheet > 2SB1266-Q

2SB1266-Q

更新时间： 2024-11-19 01:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	829K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1266-Q 数据手册

SMD Type

Transistors

PNP Transistors

2SB1266

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

2.30

-0.1

+0.8

-0.7

■ Features

+0.2

5.30

-0.2

0.50

● Suitable for sets whose height is restricted

● Complementary to 2SD1902

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-60

-6

Collector Current - Continuous

Collector Current - Pulse

-3

-8

Collector Power Dissipation

Tc = 25°C

Ta = 25°C

℃

1.65

150

Junction Temperature

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-60

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -1 mA， I

E=0

Ic= -5 mA, R^BE=∞

= -1 mA， I

CB= -50V , I

^EB= -5V , I

CBO

EBO

E=0

-100

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-2 A, I

=-200 mA

-0.4

=-2 A, I

-1.2

-1

^CE= -5V, I

CE= -5V, I

C= -500 mA

C= -3 A

280

DC current gain

hFE

Collector output capacitance

Transition frequency

Cob

CB= -10V, I

E= 0,f=1MHz

^CE= -5V, I = -500 mA

MHz

■ Classification of hfe(1)

Type

2SB1266-Q

70-140

2SB1266-R

100-200

2SB1266-S

140-280

Range

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中文翻译

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2SB1266S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
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2SB1267Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 8A I(C) \| TO-220
2SB1267R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 8A I(C) \| TO-220
2SB1267S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 8A I(C) \| TO-220
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