Datasheet > 2SB1261-Z-M

2SB1261-Z-M

更新时间： 2024-11-19 01:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1083K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1261-Z-M 数据手册

SMD Type

Transistors

PNP Transistors

2SB1261-Z

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

-0.2

5.30

0.50

■ Features

● High hFE h^FE= 100 to 400

● Low VCE(sat) V^CE(sat)≤ 0.3 V

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

-60

-7

Collector Current - Continuous

Collector Current - Pulse

Base Current

-3

-5

-0.5

Collector Power Dissipation

Tc = 25°C

Ta = 25°C

Junction Temperature

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

CEO

EBO

-60

-7

Ic= -100 μA， I

Ic= -1 mA, I =0

= -100μA， I

CB= -60V , I =0

^EB= -7V , I =0

E=0

C=0

CBO

EBO

-10

-0.3

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-1.5 A, I

=-150 mA

-0.2

C=-1.5 A, I

B=-150 mA

-0.94 -1.2

CE= -2V, I

= -200 mA

= -600 mA

= -2 A

100

DC current gain

hFE

400

Turn-on time

0.15

0.5

0.1

0.5

Ic=-1A,Vcc=-10V,R

^B1=-I^B2=-0.1A

L=10Ω,

Storage time

stg

Fall time

0.5

Collector output capacitance

Transition frequency

■ Classification of hfe(2)

CB= -10V, I

= 0,f=1MHz

CE= -5V, I = 1.5 A

MHz

Type

2SB1261-Z-M

2SB1261-Z-L

160-320

2SB1261-Z-K

200-400

Range

100-200

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