2SB1261-Z

更新时间： 2024-11-20 04:25:51

品牌	Logo	应用领域
TRSYS		晶体晶体管开关
页数	文件大小	规格书
1页	64K
描述
Plastic-Encapsulate Transistors

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中文翻译

获取价格

数据手册

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2SB1261-Z 数据手册

Transys

Electronics

I M I T E D

TO-252 Plastic-Encapsulate Transistors

2SB1261-Z TRANSISTOR (PNP)

TO-252

FEATURES

Power dissipation

1. BASE

P_CM:

W (Tamb=25℃)

2. COLLECTOR

3. EMITTER

Collector current

I_CM:

-3

2 3

Collector-base voltage

V_(BR)CBO

-60

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-100µA, I_E=0

Ic=-1mA, I_B=0

MIN

-60

-7

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-100µA, I_C=0

µA

V_CB=-60V, I_E=0

-10

I_EBO

Emitter cut-off current

V_EB=-7V, I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(sat)

f_T

_CE=-2V, I_C=-200mA

_CE=-2V, I_C=-600mA

DC current gain

400

100

V_CE=-2V, I_C=-2A

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-1.5A, I_B=-150mA

V_CE=-5V, I_C=-1.5A

-0.3

-1.2

MHz

120

C_ob

Collector output capacitance

Turn on Time

_CB=-1.0V, I_E=0, f=1MHz

t_on

0.5

V_CC=-10V, I_C=-1A, I_B1=-I_B2=-0.1A

µs

Switching Time

t_stg

Storage Time

Fall Time

2.0

0.5

t_f

CLASSIFICATION OF h_FE(1)

Rank

Range

100-200

160-320

200-400

中文翻译

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