Datasheet > 2SB1184Q(TO-251)

2SB1184Q(TO-251)

更新时间： 2024-11-25 14:46:19

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江苏长电/长晶 - CJ		/
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2SB1184Q(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/TO-252-2Plastic-Encapsulate Transistors

TO-251

TO-252-2

2SB1184 TRANSISTOR (PNP)

FEATURES

1 2 3

Low V_CE(sat). V_CE(sat)= -0.5V (Typ.) (I_C/I_B= -2A / -0.2A)

Complements the 2SD1760 / 2SD1864.

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-60

1 2 3

-50

-5

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

-3

P_C

℃

T_J

150

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

-60

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-50µA, I_E=0

I_C=-1mA, I_B=0

I_E=-50µA, I_C=0

V_CB=-40V, I_E=0

V_EB=-4V, I_C=0

µA

-1

Emitter cut-off current

I_EBO

DC current gain

h_FE(1)

V_CE=-3V, I_C=-0.5A

390

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C=-2A, I_B=-0.2A

I_C=-1.5A, I_B=-0.15A

V_CE=-5V, I_C=-0.5A, f=30MHz

V_CB=-10V, I_E=0, f=1MHz

-1.2

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

82-180

120-270

180-390

Range

Marking

12 3

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