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2SB1119

更新时间: 2024-11-06 06:24:03
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 51K
描述
PNP Epitaxial Planar Silicon Transistors

2SB1119 数据手册

  
SMD Type  
Transistors  
PNP Epitaxial Planar Silicon Transistors  
2SB1119  
Features  
Very small size making it easy to provide highdensity,  
small-sized hybrid ICs.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-25  
-25  
V
-5  
V
-1  
-2  
A
Collector current (pulse)  
Collector dissipation  
ICP  
A
PC  
500  
mW  
Jumction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
IEBO  
Testconditons  
Min  
Typ  
Max  
-0.1  
-0.1  
560  
Unit  
ìA  
VCB = -20V , IE = 0  
VCB = -4V , IE = 0  
ìA  
VCE = -2V , IC = -50mA  
VCE = -2V , IC = -1A  
VCE = -10V , IC = -50mA  
100  
40  
DC current Gain  
hFE  
Gain bandwidth product  
fT  
180  
MHz  
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Output capacitance  
VCE(sat) IC = -500mA , IB = -50mA  
VBE(sat) IC = -500mA , IB = -50mA  
V(BR)CBO IC = -10ìA , IE = 0  
-0.15 -0.7  
-0.85 -1.2  
V
-25  
-25  
-5  
V
V(BR)CEO  
V
IC = -1mA , RBE =  
V(BR)EBO IE = -10ìA , IC = 0  
Cob VCB = -10V , f = 1MHz  
V
52  
pF  
hFE Classification  
BB  
Marking  
Rank  
hFE  
R
S
T
U
280 560  
100 200  
140 280  
200 400  
1
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Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. small-sized hybrid ICS