Datasheet > 2SB1067_09

2SB1067_09

更新时间： 2024-09-21 07:29:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器功率放大器驱动
页数	文件大小	规格书
5页	173K
描述
Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications

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2SB1067_09 数据手册

2SB1067

TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)

2SB1067

Industrial Applications

Micro-Moter Drive, Hammer Drive Applications

Unit: mm

Switching Applications

Power Amplifier Applications

•

High DC current gain: h

= 2000 (min) (V

= −2 V, I = −1 A)

CE C

Low saturation voltage: V

= −1.5 V (max)

CE (sat)

(I = −1 A, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−80

Collector-emitter voltage

Emitter-base voltage

Collector current

−8

−2

Base current

−0.5

1.5

JEDEC

JEITA

―

Ta = 25°C

Tc = 25°C

Collector power

dissipation

Junction temperature

150

°C

TOSHIBA

2-8H1A

Storage temperature range

stg

−55 to 150

Weight: 0.82 g (typ.)

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

COLLECTOR

BASE

≈ 800 Ω

≈ 4 kΩ

EMITTER

2009-12-21

12 3 4 5

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