Datasheet > 2SB1015_2014

2SB1015_2014

更新时间： 2022-02-26 12:51:34

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	210K
描述
Silicon PNP Power Transistors

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数据手册

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2SB1015_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1015

DESCRIPTION

·With TO-220Fa package

·Collector power dissipation

:P_C=25W@T_C=25℃

·Low collector saturation voltage

·Complement to type 2SD1406

APPLICATIONS

·For audio frequency power amplifier

applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-60

UNIT

Open base

-60

Open collector

-7

-3

I_B

Base current

-0.5

2.0

T_a=25℃

T_C=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4

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2SB1015A-Y	TOSHIBA	TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, 2-10R1A, SC-67, 3 PIN, BIP General Purpos	获取价格
2SB1015O	TOSHIBA	TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power	获取价格