生命周期: | End Of Life | 零件包装代码: | SC-67 |
包装说明: | 2-10R1A, SC-67, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.15 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 9 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SB1015AY | ETC | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB |
获取价格 |
|
2SB1015A-Y | TOSHIBA | TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, 2-10R1A, SC-67, 3 PIN, BIP General Purpos |
获取价格 |
|
2SB1015O | TOSHIBA | TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
获取价格 |
|
2SB1015-O | TOSHIBA | TRANSISTOR POWER TRANSISTOR, BIP General Purpose Power |
获取价格 |
|
2SB1015-Y | TOSHIBA | TRANSISTOR POWER TRANSISTOR, BIP General Purpose Power |
获取价格 |
|
2SB1016 | Wing Shing | PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
获取价格 |