Datasheet > 2SB1016A_07

2SB1016A_07

更新时间： 2024-09-19 03:56:31

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	131K
描述
Power Amplifier Applications

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2SB1016A_07 数据手册

2SB1016A

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SB1016A

Power Amplifier Applications

Unit: mm

•

High breakdown voltage: V

= −100 V

CEO

Low collector-emitter saturation voltage: V

Complementary to 2SD1407A

= −2.0 V (max)

CE (sat)

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−100

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

Base current

−0.5

Collector power dissipation

(Tc = 25°C)

JEDEC

―

Junction temperature

Storage temperature range

150

°C

JEITA

stg

−55 to 150

TOSHIBA

2-10R1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 1.7 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-21

12 3 4

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