2SB1017

更新时间： 2024-09-19 06:16:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	170K
描述
Silicon PNP Power Transistors

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SB1017 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

2SB1017 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1017

DESCRIPTION

·With TO-220Fa package

·Complement to type 2SD1408

APPLICATIONS

·For power amplifications

·Recommended for 20-25W high-fidelity

audio frequency amplifier output stage

PINNING

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-80

UNIT

Open base

-80

Open collector

-5

-4

I_B

Base current

-0.4

2.0

T_a=25℃

T_C=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4

中文翻译

下载PDF

与2SB1017相关器件

型号	品牌	获取价格	描述	数据表
2SB1017_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1017_15	UTC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR
2SB1017_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1017G-O-TF3-T	UTC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1017G-R-TF3-T	UTC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1017G-X-TF3-T	UTC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR
2SB1017L-O-TF3-T	UTC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1017L-X-TF3-T	UTC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR
2SB1017L-Y-TF3-T	UTC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1017O	ISC	获取价格	暂无描述