是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-59 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.26 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.05 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 300 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 90 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA811AC17-T2B-AT | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,120V V(BR)CEO,50MA I(C),SOT-23VAR | |
2SA811AC18 | ETC |
获取价格 |
BJT | |
2SA811AC18-A | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, MINIM | |
2SA811AC18-L | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,120V V(BR)CEO,50MA I(C),SOT-23VAR | |
2SA811AC18-T1B | RENESAS |
获取价格 |
50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN | |
2SA811AC18-T1B-A | RENESAS |
获取价格 |
50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN | |
2SA811AC18-T1B-AT | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,120V V(BR)CEO,50MA I(C),SOT-23VAR | |
2SA811AC18-T2B | RENESAS |
获取价格 |
50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN | |
2SA811AC18-T2B-A | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, MINIM | |
2SA811AC18-T2B-AT | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,120V V(BR)CEO,50MA I(C),SOT-23VAR |