2SA807

更新时间： 2024-11-27 06:19:11

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	155K
描述
Silicon PNP Power Transistors

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中文翻译

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2SA807 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA807

DESCRIPTION

·With TO-3 package

·Wide area of safe operation

·Complement to type 2SC1618

APPLICATIONS

·For power amplifier and general purpose

applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-60

UNIT

Open emitter

Open base

-60

Open collector

-6

I_B

Base current

-3

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-65~150

T_stg

12 3

中文翻译

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