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2SA808 PDF预览

2SA808

更新时间: 2024-11-24 06:19:07
品牌 Logo 应用领域
锦美电子 - JMNIC 晶体晶体管
页数 文件大小 规格书
3页 41K
描述
Silicon PNP Power Transistors

2SA808 数据手册

 浏览型号2SA808的Datasheet PDF文件第2页浏览型号2SA808的Datasheet PDF文件第3页 
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SA808  
DESCRIPTION  
·With TO-3 package  
·Wide area of safe operation  
·Complement to type 2SC1619  
APPLICATIONS  
·For power amplifier and general purpose  
applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
Absolute maximum ratings(Ta=)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
-80  
UNIT  
V
Open emitter  
Open base  
-80  
V
Open collector  
-6  
V
-6  
A
IB  
Base current  
-3  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
50  
W
Tj  
150  
-65~150  
Tstg  

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