Datasheet > 2SA811A

2SA811A

更新时间： 2024-10-30 12:53:35

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	60K
描述
High DC current gain. Collector-base voltage VCBO -120 V

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2SA811A 数据手册

Product specification

2SA811A

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High DC current gain.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-120

Unit

-120

-5

-50

Total power dissipation

Junction temperature

Storage temperature

P^T

200

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CBO

Testconditons

Min

Typ

Max

-50

Unit

V^CB= -120V, I^E=0

V^EB= -5V, I^C=0

I^EBO

-50

V^CE= -6V , I^C= -1mA

V^CE= -6V , I^C= -0.1mA

135

100

500

900

DC current gain *

h^FE

Collector-emitter saturation voltage *

Base-emitter voltage *

V^CE(sat)I^C= -10mA , I^B= -1mA

-0.09 -0.30

-0.55 -0.61 -0.65

V^BE

f^T

V^CE= -6V , I^C= -1mA

V^CE= -6V , I^E= 1mA

Gain bandwidth product

Output capacitance

MHz

C^ob

V^CB= -30V , I^E= 0 , f = 1.0MHz

2.0

3.0

* Pulse test: tp

350 ìs; d

0.02.

hFE Classification

Marking

hFE

C15

135 270

C16

200 400

C17

300 600

C18

450 900

4008-318-123

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与2SA811A相关器件

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2SA811AC15-T2B-AT	RENESAS	获取价格	TRANSISTOR,BJT,PNP,120V V(BR)CEO,50MA I(C),SOT-23VAR
2SA811AC16	ETC	获取价格	BJT