Datasheet > 2SA807

2SA807

更新时间： 2024-11-24 06:17:27

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	41K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SA807 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SA807

DESCRIPTION

·With TO-3 package

·Wide area of safe operation

·Complement to type 2SC1618

APPLICATIONS

·For power amplifier and general purpose

applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-60

UNIT

Open emitter

Open base

-60

Open collector

-6

I_B

Base current

-3

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-65~150

T_stg

12 3

中文翻译

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与2SA807相关器件

型号	品牌	获取价格	描述	数据表
2SA808	JMNIC	获取价格	Silicon PNP Power Transistors
2SA808	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SA808	ISC	获取价格	isc Silicon PNP Power Transistor
2SA808	NJSEMI	获取价格	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SA808A	ETC	获取价格	2SA807 2SA808 2SA808A
2SA811	NEC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI
2SA811A	NEC	获取价格	AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SA811A	KEXIN	获取价格	PNP Silicon Epitaxial Transistor
2SA811A	TYSEMI	获取价格	High DC current gain. Collector-base voltage VCBO -120 V
2SA811A	RENESAS	获取价格	50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN