2SA1952
Transistors
zElectrical characteristics curves
90mA
80mA
−
−
−10
−5
1000
500
−5
−4
−3
−2
V
CE
=
−2V
Tc
=
25°C
V
CE
=
−2V
Pulsed
Pulsed
Ta=
100°C
25°C
−60mA
−2
−1
200
100
50
−25°C
−50mA
−40mA
−0.5
Ta=100°C
25°C
−25°C
−30mA
−20mA
−0.2
−0.1
20
10
5
−0.05
−1
−10mA
−0.02
−0.01
2
1
IB=0A
0
0
−1
−2
−3
−4
−5
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
−0.01 −0.02
−0.05 −0.1 −0.2 −0.5 −1
−2
−5
−10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I (A)
C
Fig.1 Ground emitter output characteristics
Fig.2 Ground emitter propagation characteristics
Fig.3 DC current gain vs. collector current
1000
−10
10000
Ta
=
25°C
Ta
=
25°C
=1MHz
=0
IC/IB=20
Pulsed
V
CE= −10
A
f
I
500
−5
5000
E
A
Ta= −25°C
25°C
100°C
200
100
50
−2
−1
2000
1000
500
V
BE(sat)
−0.5
−0.2
20
10
5
200
100
50
−0.1
Ta=100°C
−0.05
V
CE(sat)
25°C
−0.02
−0.01
2
1
20
10
−25°C
−0.01 −0.02
−0.05 −0.1 −0.2 −0.5 −1
−2
−5
−10
0.001 0.002
0.005 0.01 0.02
0.05
0.1
0.2
0.5
1
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : I (A)
C
EMITTER CURRENT : I
E
(A)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.4 Collector-emitter saturation voltage
Base-emitter saturation voltage
Fig.5 Resistance ratio vs. emitter current
Fig.6 Collector output capacitance
vs. collector-base voltage
vs. collector current
10
5
IE=20IB1= −20IB2
t
stg
2
1
t
on
t
f
0.5
0.2
0.1
0.05
0.02
0.01
−0.05 −0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50
COLLECTOR CURRENT : I
C
(A)
Fig.7 Switching characteristics
Rev.A
2/2