5秒后页面跳转
2SA1954B PDF预览

2SA1954B

更新时间: 2024-09-23 11:53:07
品牌 Logo 应用领域
东芝 - TOSHIBA 运算放大器
页数 文件大小 规格书
5页 229K
描述
General Purpose Amplifier Applications

2SA1954B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.5
最大集电极电流 (IC):0.5 A配置:Single
最小直流电流增益 (hFE):500JESD-30 代码:R-PDSO-G3
JESD-609代码:e0端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):0.1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SA1954B 数据手册

 浏览型号2SA1954B的Datasheet PDF文件第2页浏览型号2SA1954B的Datasheet PDF文件第3页浏览型号2SA1954B的Datasheet PDF文件第4页浏览型号2SA1954B的Datasheet PDF文件第5页 
2SA1954  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1954  
General Purpose Amplifier Applications  
Unit: mm  
Switching and Muting Switch Application  
Low saturation voltage: V  
(1) = 15 mV (typ.)  
CE (sat)  
@I = 10 mA/I = 0.5 mA  
C
B
Large collector current: I = 500 mA (max)  
C
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
15  
12  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
I
500  
50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
JEDEC  
JEITA  
T
j
125  
SC-70  
2-2E1A  
T
stg  
55~125  
TOSHIBA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
Weight: 0.006 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
1
2007-11-01  

与2SA1954B相关器件

型号 品牌 获取价格 描述 数据表
2SA1954-B TOSHIBA

获取价格

General Purpose Amplifier Applications Switching and Muting Switch Application
2SA1955 TOSHIBA

获取价格

TRANSISTOR (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
2SA1955 FOSHAN

获取价格

SOT-23
2SA1955_07 TOSHIBA

获取价格

General Purpose Amplifier Applications Switching and Muting Switch Application
2SA1955A ETC

获取价格

TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 500MA I(C) | SOT-416
2SA1955-A TOSHIBA

获取价格

TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
2SA1955-A(TE85L) TOSHIBA

获取价格

2SA1955-A(TE85L)
2SA1955B ETC

获取价格

TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 500MA I(C) | SOT-416
2SA1955-B TOSHIBA

获取价格

TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
2SA1955CT-A TOSHIBA

获取价格

TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP Genera