Datasheet > 2SA1806Q

2SA1806Q

更新时间： 2024-09-23 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	53K
描述
TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 50MA I(C) \| SOT-416

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中文翻译

获取价格

数据手册

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2SA1806Q 数据手册

Transistor

2SA1806

Silicon PNP epitaxial planer type

For high speed switching

Unit: mm

1.6±0.15

0.8±0.1

0.4

Features

High-speed switching.

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

SS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–15

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–15

–4

1:Base

–100

–50

˚C

2:Emitter

3:Collector

EIAJ:SC–75

SS–Mini Type Package

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

125

Marking symbol : AK

T_j

125

T_stg

–55 ~ +125

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

I_EBO

Conditions

min

typ

max

– 0.1

150

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= –8V, I_E= 0

_EB= –3V, I_C= 0

µA

h_FE1

h_FE2

V_CE= –1V, I_C= –10mA

V_CE= –1V, I_C= –1mA

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

_C= –10mA, I_B= – 1mA

– 0.1

1500

– 0.2

MHz

Transition frequency

Collector output capacitance

Turn-on time

f_T

V_CB= –10V, I_E= 10mA, f = 200MHz

V_CB= –5V, I_E= 0, f = 1MHz

(Note 1) Next page

800

C_ob

t_on

t_off

t_stg

Turn-off time

(Note 1) Next page

Storage time

(Note 1) Next page

^*h_FE1Rank classification

Rank

h_FE1

50 ~ 120

AKQ

90 ~ 150

AKR

Marking Symbol

12 3

中文翻译

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与2SA1806Q相关器件

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2SA1807/NP	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, CPT, DPA
2SA1807/P	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, CPT, DPA
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2SA1807F5	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 600V V(BR)CEO \| 1A I(C) \| TO-252
2SA1807F5/N	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, CPTF5, 3
2SA1807F5/NP	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, CPTF5, 3