是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 56 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 10 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | NOT SPECIFIED |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 15 MHz |
VCEsat-Max: | 1 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1807TL/NP | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, CPTF5, 3 | |
2SA1807TL/P | ROHM |
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1000mA, 600V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPTF5, 3 PIN | |
2SA1807TLN | ETC |
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TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-252VAR | |
2SA1807TLP | ETC |
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TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-252VAR | |
2SA1807TR/N | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, CPTF5, 3 | |
2SA1807TR/NP | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, CPTF5, 3 | |
2SA1807TR/P | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, CPTF5, 3 | |
2SA1808 | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 30MA I(C) | SOT-23VAR | |
2SA1808M | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 30MA I(C) | SOT-23VAR | |
2SA1808N | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 30MA I(C) | SOT-23VAR |