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2SA1797G-X-TN3-T PDF预览

2SA1797G-X-TN3-T

更新时间: 2022-09-16 17:06:01
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4页 181K
描述
POWER TRANSISTOR

2SA1797G-X-TN3-T 数据手册

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2SA1797  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
VCEO  
-50  
V
VEBO  
-6  
V
DC  
-2  
A
Collector Current  
IC  
PULSE(Note 1)  
TO-92NL  
SOT-223  
SOT-89  
-5  
A
1
0.8  
W
W
W
W
°C  
°C  
Collector Power Dissipation  
PC  
0.5  
TO-252  
1.9  
Junction Temperature  
TJ  
150  
Storage Temperature  
TSTG  
-55 ~ +150  
Note: 1. Single pulse, PW=10ms  
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
IC = -50μA  
IC = -1mA  
IE = -50μA  
VCB = -50V  
VEB = -5V  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
-50  
-50  
-6  
V
V
V
-0.1  
-0.1  
μA  
μA  
V
Emitter Cutoff Current  
IEBO  
Collector-Emitter Saturation Voltage  
DC Current Gain  
VCE(SAT) IC/IB = -1A/-50mA (Note)  
-0.15 -0.35  
400  
hFE  
fT  
VCE = -2V, IC=-0.5A (Note)  
VCE = -2V, IE=0.5A, f=100MHz  
VCB = -10V, IE=0A, f=1MHz  
120  
Transition Frequency  
200  
MHz  
pF  
Output Capacitance  
COB  
36  
Note: Measured using pulse current.  
„
CLASSIFICATION OF hFE  
RANK  
A
B
RANGE  
120-240  
200-400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R208-029,F  
www.unisonic.com.tw  

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