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2SA1745

更新时间: 2024-11-21 07:29:43
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 47K
描述
PNP Epitaxial Planar Silicon Transistors

2SA1745 数据手册

  
SMD Type  
Transistors  
PNP Epitaxial Planar Silicon Transistors  
2SA1745  
Features  
Very small-sized package.  
Low collector-to-emitter saturation voltage.  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-20  
-15  
V
-5  
V
-500  
-1  
mA  
A
Collector current (pulse)  
Collector dissipation  
ICP  
PC  
150  
mW  
Jumction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
IcBO  
IEBO  
hFE  
Testconditons  
Min  
135  
Typ  
Max  
-0.1  
-0.1  
600  
Unit  
nA  
Collector cutoff current  
Emitter cutoff current  
VCB = -15V , IE = 0  
VEB = -4V , IC = 0  
nA  
DC current Gain  
VCE = -2V , IC = -10mA  
VCE = -2V , IC = -50mA  
VCB = -10V , f = 1MHz  
IC = -5mA , IB =-0.5mA  
IC = -200mA , IB =-10mA  
Gain bandwidth product  
Common base output capacitance  
fT  
400  
6.5  
-15  
MHz  
pF  
mV  
mV  
V
Cob  
-35  
Collector-to-emitter saturation voltage  
VCE(sat)  
-200 -360  
-0.95 -1.2  
Base-to-emitter saturation voltage  
Collector-to-base breakdown voltage  
Collector-to-emitter breakdown voltage  
Emitter-to-base breakdown voltage  
VBE(sat) IC = -200mA , IB =-10mA  
V(BR)CBO IC = -10ìA , IE = 0  
-20  
-15  
-5  
V
V(BR)CEO  
V
IC = -1mA , RBE =  
V(BR)EBO IE = -10ìA , IC = 0  
V
hFE Classification  
ES  
6
Marking  
Rank  
5
7
hFE  
135 270  
200 400  
300 600  
1
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