Datasheet > 2SA1745-ES4

2SA1745-ES4

更新时间： 2024-11-22 01:08:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1106K
描述
PNP Transistors

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数据手册

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2SA1745-ES4 数据手册

SMD Type

Transistors

PNP Transistors

2SA1745

■ Features

● Low collector-to-emitter saturation voltage.

● Complementary to 2SC4555

1.Base

2.Emitter

3.Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

-20

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

-15

-5

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-0.5

℃

-1

150

Storage Temperature range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-20

-15

-5

Ic= -100 uA， I

Ic= -1 mA，RBE= ∞

= -100 uA， I =0

CB= -15 V , I =0

EB= -4V , I =0

=-5 mA, I =-0.5 mA

E=0

CBO

EBO

-0.1

-35

-15

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

=-200 mA, I

=-10 mA

-200 -360

-0.95 -1.2

600

BE(sat)

FE(1)

FE(2)

CE= -2V, I

= -10 mA

135

C= -400 mA

Collector output capacitance

Transition frequency

Cob

CB= -10V, f=1MHz

CE= -2V, I = -50 mA

6.5

400

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SA1745-ES3

135-270

ES3

2SA1745-ES4

200-400

ES4

2SA1745-ES5

300-600

ES5

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